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STW12NK80Z Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STW12NK80Z
Descripción Electrónicos  N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET
PDF  15 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW12NK80Z Datasheet(HTML) 3 Page - STMicroelectronics

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STB12NK80Z - STP12NK80Z - STW12NK80Z
2 Electrical characteristics
3/15
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Table 5.
Dynamic
Table 6.
Switching times
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 1mA, VGS= 0
800
V
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating,
VDS = Max Rating,Tc = 125°C
1
50
µA
µA
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±20V
±
10
µA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID = 100 µA
33.75
4.5
V
RDS(on)
Static Drain-Source On
Resistance
VGS= 10 V, ID= 4.5 A
0.65
0.75
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs Note 4
Forward Transconductance
VDS =15V, ID = 5.25A
12
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS =25V, f=1 MHz, VGS=0
2620
250
53
pF
pF
pF
Coss eq.
Note 5
Equivalent Ouput Capacitance VGS=0, VDS =0V to 640V
100
pF
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=640V, ID = 10.5 A
VGS =10V
(see Figure 17)
87
14
44
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD=400 V, ID=5.25 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
30
18
ns
ns
td(off)
tf
Turn-off Delay Time
Fall Time
VDD=400 V, ID=5.25A,
RG=4.7Ω, VGS=10V
(see Figure 18)
70
20
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD=640 V, ID=10.5A,
RG=4.7Ω, VGS=10V
(see Figure 18)
16
15
28
ns
ns
ns



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