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AOK30B135W1 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

No. de pieza AOK30B135W1
Descripción Electrónicos  Minimal gate spike due to high input capacitance
PDF  8 Pages
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Fabricante Electrónico  AOSMD [Alpha & Omega Semiconductors]
Página de inicio  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOK30B135W1 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

  AOK30B135W1 Datasheet HTML 1Page - Alpha & Omega Semiconductors AOK30B135W1 Datasheet HTML 2Page - Alpha & Omega Semiconductors AOK30B135W1 Datasheet HTML 3Page - Alpha & Omega Semiconductors AOK30B135W1 Datasheet HTML 4Page - Alpha & Omega Semiconductors AOK30B135W1 Datasheet HTML 5Page - Alpha & Omega Semiconductors AOK30B135W1 Datasheet HTML 6Page - Alpha & Omega Semiconductors AOK30B135W1 Datasheet HTML 7Page - Alpha & Omega Semiconductors AOK30B135W1 Datasheet HTML 8Page - Alpha & Omega Semiconductors  
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Symbol
Min
Typ
Max
Units
BV CES
Collector-Emitter Breakdown Voltage
1350
-
-
V
TJ=25°C
-
1.8
2.2
TJ=125°C
-
2.3
-
TJ=175°C
-
2.5
-
TJ=25°C
-
1.6
1.9
TJ=125°C
-
1.73
TJ=175°C
-
1.74
-
V GE(th)
Gate-Emitter Threshold Voltage
4.7
5.15
5.9
V
TJ=25°C
-
-
10
TJ=125°C
-
-
800
TJ=175°C
-
-
8000
I GES
Gate-Emitter leakage current
-
-
±100
nA
g FS
-
31
-
S
C ies
-
1932
-
pF
C oes
-
107
-
pF
C res
-
32
-
pF
Q g
-
62
-
nC
Q ge
-
13
-
nC
Q gc
-
29
-
nC
R g
-
1.75
-
t D(off)
-
129
-
ns
t f
-
148
-
ns
Collector-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
I CES
Zero Gate Voltage Collector Current
V F
Diode Forward Voltage
DYNAMIC PARAMETERS
µA
VCE=5V, IC=1mA
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Reverse Transfer Capacitance
VGE=0V, VCE=25V, f=1MHz
VCE=20V, IC=30A
VCE=0V, VGE=±30V
Forward Transconductance
V CE(sat)
IC=1mA, VGE=0V, TJ=25°C
VGE=15V, IC=30A
V
VCE=1350V, VGE=0V
VGE=0V, IC=30A
V
Turn-Off Delay Time
TJ=25°C
VGE=15V, VCE=600V, IC=30A,
RG=10Ω,
Turn-Off Fall Time
Gate to Collector Charge
Gate to Emitter Charge
VGE=15V, VCE=1080V, IC=30A
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
Total Gate Charge
Gate resistance
VGE=0V, VCE=0V, f=1MHz
f
E off
-
1.47
-
mJ
t D(off)
-
154
-
ns
t f
-
208
-
ns
E off
-
1.63
-
mJ
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
RG=10Ω,
Parasitic Inductance=150nH
TJ=175°C
VGE=15V, VCE=600V, IC=30A,
RG=10Ω,
Parasitic Inductance=150nH
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Energy
Turn-Off Energy
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
Rev.2.0: January 2015
www.aosmd.com
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