Thermal Characteristic

Thermal Resistance, Junction-to-Case

(Note 2)

1.8

/W

unless otherwise noted)

Symbol

Parameter

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

100

115

-

V

Zero Gate Voltage Drain Current

-

-

1

A

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

1.3

1.9

2.5

V

Drain-Source On-State Resistance

-

27

31

m

Forward Transconductance

-

15

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

2000

-

PF

Output Capacitance

-

300

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

250

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

7

-

nS

Turn-on Rise Time

-

7

-

nS

Turn-Off Delay Time

-

29

-

nS

Turn-Off Fall Time

-

7

-

nS

Total Gate Charge

-

39

-

nC

Gate-Source Charge

-

8

-

nC

Gate-Drain Charge

-

12

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

-

1.2

V

Diode Forward Current

(Note 2)

-

-

-

30

A

Reverse Recovery Time

-

32

-

nS

Qrr

Reverse Recovery Charge

TJ = 25°C, IF = 10A

di/dt = 100A/s

(Note3)

-

53

-

nC

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ” 10 sec.

3. Pulse Test: Pulse Width ” 300 s, Duty Cycle ” 2%.

4. Guaranteed by design, not subject to production

5. EAS Condition : Tj=25