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RM4N650HD Datasheet(PDF) 2 Page - Rectron Semiconductor

No. de pieza RM4N650HD
Descripción Electrónicos  N-Channel Super Junction Power MOSFET
PDF  11 Pages
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Fabricante Electrónico  RECTRON [Rectron Semiconductor]
Página de inicio  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

RM4N650HD Datasheet(HTML) 2 Page - Rectron Semiconductor

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Parameter
Symbol
Drain Source voltage slope, VDS
480 V,
dv/dt
50
V/ns
Reverse diode dv/dt
VDS
480 V,ISD<ID
dv/dt
15
V/ns
Operating Junction and Storage Temperature Range
TJ,TSTG
-55...+150
°C
* limited by maximum junction temperature
Table 2.
Thermal Characteristic
Parameter
Symbol
Value
Unit
Thermal Resistance
Junction-to-Case
Maximum
RthJC
2.7
4.4
°C /W
Thermal Resistance
Junction-to-Ambient
Maximum
RthJA
62
80
°C /W
Table 3.
Electrical Characteristics (TA=25
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
650
Zero Gate Voltage Drain Current(Tc=25
)
IDSS
VDS=600V,VGS=0V
1
μA
Zero Gate Voltage Drain Current(Tc=125
)
IDSS
VDS=600V,VGS=0V
50
μA
Gate-Body Leakage Current
IGSS
VGS=±30V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2.5
3
3.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2.5A
1000
1200
mΩ
Dynamic Characteristics
Forward Transconductance
gFS
VDS = 20V, ID = 2.5A
4
S
Input Capacitance
Clss
280
PF
Output Capacitance
Coss
26
PF
Reverse Transfer Capacitance
Crss
VDS=50V,VGS=0V,
F=1.0MHz
2.3
PF
Total Gate Charge
Qg
6.5
10
nC
Gate-Source Charge
Qgs
1.3
nC
Gate-Drain Charge
Qgd
VDS=480V,ID=4A,
VGS=10V
2.5
nC
Intrinsic gate resistance
RG
f = 1 MHz open drain
2.5
Ω
Switching times
Turn-on Delay Time
td(on)
6
nS
Turn-on Rise Time
tr
3
nS
Turn-Off Delay Time
td(off)
48
60
nS
Turn-Off Fall Time
tf
VDD=380V,ID=2.5A,
RG=20Ω,VGS=10V
8
15
nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
4
A
Pulsed Source-drain current(Body Diode)
ISDM
TC=25°C
12
A
Forward On Voltage
VSD
Tj=25°C,ISD=4A,VGS=0V
1
1.3
V
Reverse Recovery Time
trr
150
nS
Reverse Recovery Charge
Qrr
0.85
uC
Peak reverse recovery current
Irrm
Tj=25°C,IF=4A,di/dt=100A/μs
11
A
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25 ,VDD=50V,VG=10V, RG=25Ω
RM4N650T2
RM4N650HD
RM4N650TI
Unit
V



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