DMT69M8LSS-13 datasheet(2/7 Pages) DIODES

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DMT69M8LSS

Document number: DS38325 Rev. 3 - 2

2 of 7

www.diodes.com

February 2017

DMT69M8LSS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±16

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

9.8

7.9

t<10s

TA = +25°C

TA = +70°C

12.2

9.5

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

Avalanche Current, L = 0.1mH

IAS

Avalanche Energy, L = 0.1mH

EAS

31.5

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.25

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

100

°C/W

t<10s

55.5

°C/W

Total Power Dissipation (Note 6)

1.6

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

°C/W

Thermal Resistance, Junction to Case (Note 6)

RθJC

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

μA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±16V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

0.7

—

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

9.8

Ω

VGS = 10V, ID = 13.5A

—

VGS = 4.5V, ID = 11.5A

Diode Forward Voltage

VSD

—

0.9

1.2

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

1,925

—

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

438

—

Reverse Transfer Capacitance

Crss

—

Gate Resistance

—

1.7

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 10V)

—

33.5

—

VDS = 30V, ID = 13.5A

Total Gate Charge (VGS = 4.5V)

—

15.6

—

Gate-Source Charge

QGS

—

4.7

—

Gate-Drain Charge

QGD

—

5.3

—

Turn-On Delay Time

tD(ON)

—

4.5

—

VDD = 30V, VGS = 10V,

RG = 6Ω, ID = 13.5A

Turn-On Rise Time

—

8.6

—

Turn-Off Delay Time

tD(OFF)

—

35.9

—

Turn-Off Fall Time

—

15.7

—

Body Diode Reverse Recovery Time

tRR

—

18.2

—

IF = 13.5A, di/dt = 400A/μs

Body Diode Reverse Recovery Charge

QRR

—

33.1

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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