DMNH4015SSD-13 datasheet(2/8 Pages) DIODES

2 / 8 page

DMNH4015SSD

Document number: DS38105 Rev. 1 - 2

2 of 8

www.diodes.com

July 2016

DMNH4015SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

8.6

6.9

t<10s

TA = +25°C

TA = +70°C

11.0

8.8

Maximum Body Diode Forward Current (Note 6)

2.2

Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)

IDM

Avalanche Current (Note 7) L = 0.1mH

IAS

Avalanche Energy (Note 7) L = 0.1mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

1.4

TA = +70°C

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

111

°C/W

t<10s

Total Power Dissipation (Note 6)

TA = +25°C

2.0

TA = +70°C

1.2

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

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