QID4520002 datasheet(5/6 Pages) POWEREX

5 / 6 page

QID4520002

Dual IGBT HVIGBT Module

200 Amperes/4500 Volts

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

Preliminary

11/14 Rev. 3

Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.

The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.

COLLECTOR-EMITTER VOLTAGE, V

CE, (VOLTS)

CAPACITANCE VS. VCE

(TYPICAL)

100

102

166.0

16.6

1.66

0.165

101

VGE = 0V

Tj = 25°C

f = 100 kHz

Cies

Coes

Cres

165.0

82.5

247.5 330.0 412.5

10-1

GATE CHARGE, Q

G, (C)

GATE CHARGE VS. VGE

-5

-10

-15

0.825

3.30

2.48

1.65

VCE = 2800V

IC = 200A

Tj = 25°C

COLLECTOR CURRENT, I

C, (AMPERES)

2.66

0.33

0.66

1.00

1.33

1.66

2.00

2.33

VCC = 2800V

VGE = ±15V

RG(on) = 16.2

RG(off) = 60

Ls = 150nH

Tj = 125°C

Inductive Load

HALF-BRIDGE

SWITCHING ENERGY

CHARACTERISTICS (TYPICAL)

Eon

Eoff

Erec

COLLECTOR EMITTER VOLTAGE, V

CES, (VOLTS)

500

416

333

250

166

2000

1000

3000

REVERSE BIAS SAFE

OPERATING AREA (RBSOA)

VCC ≤ 3200V

VGE = ±15V

RG(off) = 60

Tj = 125°C

5000

4000

QID4520002 Datasheet(PDF) 5 Page - Powerex Power Semiconductors

QID4520002 Datasheet(HTML) 5 Page - Powerex Power Semiconductors

Html Pages

1 2 3 4 5 6

Datasheet Descarga

Enlace URL