QID4520002 datasheet(3/6 Pages) POWEREX

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QID4520002

Dual IGBT HVIGBT Module

200 Amperes/4500 Volts

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

Preliminary

11/14 Rev. 3

Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.

The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.

Electrical Characteristics,

Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Input Capacitance

Cies

—

Output Capacitance

Coes

VGE = 0V, VCE = 10V, f = 100kHz

—

1.83

—

Reverse Transfer Capacitance

Cres

—

0.83

—

Turn-on Delay Time

td(on)

VCC = 2800V, IC = 200A,

—

1.00

—

µs

Rise Time

VGE = ±15V, RG(on) = 16.2Ω,

—

0.30

—

µs

Turn-off Delay Time

td(off)

RG(off) = 60Ω, LS = 150nH,

—

3.6

—

µs

Fall Time

Inductive Load

—

0.36

—

µs

Turn-on Switching Energy

Eon

Tj = 125°C, IC = 200A, VGE = ±15V,

—

917

—

mJ/P

Turn-off Switching Energy

Eoff

RG(on) = 16.2Ω, RG(off) = 60Ω,

—

716

—

mJ/P

VCC = 2800V, LS = 150nH, Inductive Load

Diode Reverse Recovery Time**

trr

VCC = 2800V, IE = 200A,

—

0.7

—

µs

Diode Reverse Recovery Charge**

Qrr

VGE = ±15V, RG(on) = 16.2Ω,

—

167*

—

µC

Diode Reverse Recovery Energy

Erec

LS = 150nH, Inductive Load

—

258

—

mJ/P

Stray Inductance (C1-E2)

LSCE

—

Lead Resistance Terminal-Chip

RCE

—

0.8

—

mΩ

Thermal and Mechanical Characteristics,

Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case***

Rth(j-c) Q

Per IGBT

—

°K/kW

Thermal Resistance, Junction to Case***

Rth(j-c) D

Per FWDi

—

104

—

°K/kW

Contact Thermal Resistance, Case to Fin

Rth(c-f)

Per Module,

—

°K/kW

Thermal Grease Applied, λgrease = 1W/mK

Comparative Tracking Index

CTI

600

—

Clearance Distance in Air (Terminal to Base)

da(t-b)

35.0

—

Creepage Distance Along Surface

ds(t-b)

—

(Terminal to Base)

Clearance Distance in Air

da(t-t)

—

(Terminal to Terminal)

Creepage Distance Along Surface

ds(t-t)

—

(Terminal to Terminal)

*Pulse width and repetition rate should be such that device junction temperature rise is negligible.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

***TC measurement point is just under the chips.

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