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DMN3110LCP3 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN3110LCP3 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 7 page ![]() DMN3110LCP3 Document number: DS38546 Rev. 3 - 2 1 of 7 www.diodes.com January 2017 © Diodes Incorporated DMN3110LCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID TA = +25°C 30V 69 mΩ @ VGS = 8V 3.2A 80 mΩ @ VGS = 4.5V 3.0A Description This new generation MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with as really small footprint. Applications Battery Management Load Switch Battery Protection Handheld and Mobile Application Features and Benefits Low Qg & Qgd Small Footprint Low Profile 0.30mm Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: X2-DSN1006-3 Terminal Connections: See Diagram Below Terminals: Finish – Matte Tin Annealed Over Copper Pillar Ordering Information (Note 4) Part Number Case Packaging DMN3110LCP3-7 X2-DSN1006-3 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony- free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 Code B C D E F G H I J K L M Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D X2-DSN1006-3 Equivalent Circuit C = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M or M = Month (ex: 9 = September) Top View |
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