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K72 Marking, PJM7002KNSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

No. de pieza PJM7002KNSA
Descripción Electrónicos  N-Enhancement Field Effect Transistor
PDF  8 Pages
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Fabricante Electrónico  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Página de inicio  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM7002KNSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM7002KNSA
N-Enhancement Field Effect Transistor
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www.pingjingsemi.com
Revision：2.2 Feb-2019
Features
Fast switching
Low gate charge and RDS(ON)
Low reverse transfer capacitances
ESD protected(HBM) up to 2KV
Applications
PWM applications
Load switch
Power management
SOT-23
1. Gate 2.Source 3.Drain
Marking: K72
D
S
G
Absolute Maximum Ratings
(TC=25℃, unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
0.3
A
Power Dissipation
PD
0.35
W
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ.
Units
Maximum Junction-to-Ambient
RθJA
357
°C/W
℃


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