| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Samsung semiconductor |
IRF130
|
211Kb / 5P |
N-CHANNEL POWER MOSFETS
|
 Fairchild Semiconductor |
IRF130
|
180Kb / 6P |
N-Channel Power MOSFETs, 20 A, 60-100 V
|
 Intersil Corporation |
IRF130
|
56Kb / 7P |
14A, 100V, 0.160 Ohm, N-Channel Power MOSFET
March 1999 |
 International Rectifier |
IRF130
|
147Kb / 7P |
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)
|
 New Jersey Semi-Conduct... |
IRF130
|
106Kb / 3P |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
|