SCT070W120G3-4 pdf, SCT070W120G3-4 Descripción Electrónicos, SCT070W120G3-4 Datasheet, SCT070W120G3-4 view ::: ALLDATASHEET :::

No. de pieza	SCT070W120G3-4

Descripción Electrónicos	Silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HiP247-4 package

Tamaño del archivo	499.71 Kbytes

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Número de pieza similar - SCT070W120G3-4

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	SCT070W120G3-4AG	506Kb / 12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HiP247-4 package 19-Dec-2023

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	SCTWA90N65G2V-4	239Kb / 13P	Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package 25-Nov-2020
	SCTW40N120G2V	205Kb / 12P	Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package 09-Jun-2021
	SCTW100N120G2AG	217Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package 23-Jul-2020
	SCTW35N65G2VAG	206Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package 09-Sep-2020
	SCTW60N120G2AG	197Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package 18-May-2020
	SCTWA40N120G2AG	257Kb / 12P	Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package 22-Nov-2021
	SCTWA60N120G2AG	242Kb / 12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package 16-Dec-2020
	SCT070H120G3AG	396Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package 04-Apr-2023
	SCT10N120AG	238Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package 21-Sep-2022