PTFC270101M-V1-R1K pdf, PTFC270101M-V1-R1K Descripción Electrónicos, PTFC270101M-V1-R1K Datasheet, PTFC270101M-V1-R1K view ::: ALLDATASHEET :::

No. de pieza	PTFC270101M-V1-R1K

Descripción Electrónicos	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz

Tamaño del archivo	933.41 Kbytes

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Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

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Número de pieza similar - PTFC270101M-V1-R1K

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PTFC270101M	409Kb / 21P	High Power RF LDMOS Field Effect Transistor Rev. 04, 2015-04-01
Infineon Technologies A...	PTFC270101M	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26
Cree, Inc	PTFC270101M	970Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
Infineon Technologies A...	PTFC270101MV1R1K	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26
Infineon Technologies A...	PTFC270101MV1R1KXUMA1	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PXAC243502FV	1Mb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PTFC270101M	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26
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	PTFA220121M	381Kb / 21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz Rev. 10, 2015-10-23
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Cree, Inc	PXAC243502FV	543Kb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
	PTFC270051M	745Kb / 14P	High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz
	PTFC270101M	970Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
	PTFA220121M	955Kb / 21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
	PTFB201402FC	595Kb / 14P	High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz