| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Infineon Technologies A... |
PXAC243502FV
|
1Mb / 10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |
|
PTFC270101M
|
410Kb / 22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
Rev. 04.1, 2016-07-26 |
|
PTFC270051M
|
293Kb / 14P |
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz
Rev. 01.1, 2016-07-26 |
|
PTFA220121M
|
381Kb / 21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
Rev. 10, 2015-10-23 |
|
PTFA220041M
|
331Kb / 18P |
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz
Rev. 10.1, 2016-06-01 |
 Cree, Inc |
PXAC243502FV
|
543Kb / 10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
|
|
PTFC270051M
|
745Kb / 14P |
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz
|
|
PTFA220121M
|
955Kb / 21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
|
|
PTFB201402FC
|
595Kb / 14P |
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz
|
 WOLFSPEED, INC. |
PTFC270101M
|
933Kb / 22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Rev. 07, 2023-06-28 |