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PTFC270101M Datasheet (PDF) - Cree, Inc

PTFC270101M Datasheet PDF - Cree, Inc
No. de pieza PTFC270101M
Descarga  PTFC270101M Descarga
Tamaño del archivo   970.43 Kbytes
Page   22 Pages
Fabricante Electrónico  CREE [Cree, Inc]
Página de inicio  http://www.cree.com/
Logo CREE - Cree, Inc
Descripción Electrónicos High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz

PTFC270101M Datasheet (PDF)

Go To PDF Page Descarga Datasheet
PTFC270101M Datasheet PDF - Cree, Inc

No. de pieza PTFC270101M
Descarga  PTFC270101M Click to download

Tamaño del archivo   970.43 Kbytes
Page   22 Pages
Fabricante Electrónico  CREE [Cree, Inc]
Página de inicio  http://www.cree.com/
Logo CREE - Cree, Inc
Descripción Electrónicos High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz

PTFC270101M Datasheet (HTML) - Cree, Inc


PTFC270101M Detalles de producto

Description
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

Features
• Unmatched input and output
• Typical CW performance, 2170 MHz, 28 V
   - Output power @ P1dB = 10 W
   - Gain = 20 dB
   - Efficiency = 60%
• Typical two-carrier WCDMA performance, 2170
   MHz, 28 V, 8 dB PAR
   - Output power = 1.3 W avg
   - Gain = 21 dB
   - Efficiency = 21%
   - ACPR = –44.9 dBc @ 5 MHz
•     Capable of handling 10:1 VSWR @ 28 V, 10 W
   (CW) output power
• Integrated ESD protection
• Pb-free and RoHS compliant




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Acerca de Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.




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