PTFB201402FC pdf, PTFB201402FC Descripción Electrónicos, PTFB201402FC Datasheet, PTFB201402FC view ::: ALLDATASHEET :::

No. de pieza	PTFB201402FC

Descripción Electrónicos	High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz

Tamaño del archivo	595.53 Kbytes

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Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

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Número de pieza similar - PTFB201402FC

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PTFB201402FC	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14
	PTFB201402FCV1R0	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14
	PTFB201402FCV1R0XTMA1	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14
	PTFB201402FCV1R250	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14
	PTFB201402FCV1R250XTMA1	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PTFB241402F	556Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 03, 2010-04-19
	PXAC243502FV	1Mb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC201602FC	402Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
	PTFC270101M	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26
	PTFB241402F	810Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 04.1, 2016-06-15
	PTFA220121M	381Kb / 21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz Rev. 10, 2015-10-23
Cree, Inc	PTFC270051M	745Kb / 14P	High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz
	PTFC270101M	970Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
	PTFA220121M	955Kb / 21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
	PXAC201602FC	529Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz