PTFC270101M pdf, PTFC270101M Descripción Electrónicos, PTFC270101M Datasheet, PTFC270101M view ::: ALLDATASHEET :::

No. de pieza	PTFC270101M

Descripción Electrónicos	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz

Tamaño del archivo	970.43 Kbytes

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Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

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Número de pieza similar - PTFC270101M

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PTFC270101M	409Kb / 21P	High Power RF LDMOS Field Effect Transistor Rev. 04, 2015-04-01
Infineon Technologies A...	PTFC270101M	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26
WOLFSPEED, INC.	PTFC270101M	933Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28
WOLFSPEED, INC.	PTFC270101M-V1-R1K	933Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28
Infineon Technologies A...	PTFC270101MV1R1K	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PXAC243502FV	1Mb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PTFC270101M	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26
	PTFC270051M	293Kb / 14P	High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz Rev. 01.1, 2016-07-26
	PTFA220121M	381Kb / 21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz Rev. 10, 2015-10-23
	PTFA220041M	331Kb / 18P	High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz Rev. 10.1, 2016-06-01
Cree, Inc	PXAC243502FV	543Kb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
	PTFC270051M	745Kb / 14P	High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz
	PTFA220121M	955Kb / 21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
	PTFB201402FC	595Kb / 14P	High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz
WOLFSPEED, INC.	PTFC270101M	933Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28