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CGHV96100F2 Datasheet (PDF) - Cree, Inc
CGHV96100F2 Datasheet PDF - Cree, Inc
No. de pieza CGHV96100F2
Descarga  CGHV96100F2 Descarga
Tamaño del archivo   1131.94 Kbytes
Page   13 Pages
Fabricante Electrónico  CREE [Cree, Inc]
Página de inicio  http://www.cree.com/
Logo CREE - Cree, Inc
Descripción Electrónicos 100 W, 7.9 - 9.6 GHz, 50-ohm, Input

CGHV96100F2 Datasheet (PDF)

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CGHV96100F2 Datasheet PDF - Cree, Inc

No. de pieza CGHV96100F2
Descarga  CGHV96100F2 Click to download

Tamaño del archivo   1131.94 Kbytes
Page   13 Pages
Fabricante Electrónico  CREE [Cree, Inc]
Página de inicio  http://www.cree.com/
Logo CREE - Cree, Inc
Descripción Electrónicos 100 W, 7.9 - 9.6 GHz, 50-ohm, Input

CGHV96100F2 Datasheet (HTML) - Cree, Inc




Número de pieza similar - CGHV96100F2

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
WOLFSPEED, INC.		 CGHV96100F2 WOLFSPEED-CGHV96100F2 Datasheet
1Mb / 13P		 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Rev. 3.2, 2022-12-8
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Descripción similar - CGHV96100F2

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Cree, Inc		 CGHV96050F1 CREE-CGHV96050F1 Datasheet
1Mb / 14P		 50 W, 7.9 - 9.6 GHz, 50-ohm, Input
Rev 2.0
CGHV96050F2 CREE-CGHV96050F2 Datasheet
1Mb / 13P		 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
logo
Qorvo, Inc		 QPA1010D QORVO-QPA1010D Datasheet
1Mb / 26P		 7.9 ??11.0 GHz 15 W GaN Power Amplifier
April 2, 2021
QPA1011D QORVO-QPA1011D Datasheet
982Kb / 26P		 7.9 ??11.0 GHz 25 W GaN Power Amplifier
May 2021
logo
WOLFSPEED, INC.		 CGHV1A250F WOLFSPEED-CGHV1A250F Datasheet
1Mb / 17P		 8.8 - 9.6 GHz, 300 W GaN HPA
Rev. 0.0 July 2023
CGHV50200F WOLFSPEED-CGHV50200F Datasheet
1Mb / 15P		 200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT
Rev. 3.2, 2022-12-8
CGHV96050F1 WOLFSPEED-CGHV96050F1 Datasheet
1Mb / 13P		 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Rev. 2.3, 2022-12-13
CGHV96050F2 WOLFSPEED-CGHV96050F2 Datasheet
1Mb / 13P		 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Rev. 3.5, 2022-12-13
CGHV96100F2 WOLFSPEED-CGHV96100F2 Datasheet
1Mb / 13P		 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Rev. 3.2, 2022-12-8
CGHV96130F WOLFSPEED-CGHV96130F Datasheet
1Mb / 13P		 130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Rev. 2.0, 2022-8-25
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Acerca de Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.




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