Description
Wolfspeed’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged
package for optimal electrical and thermal performance.
Features
• 8.4 - 9.6 GHz Operation
• 166 W POUT typical
• 7.5 dB Power Gain
• 42% Typical PAE
• 50 Ohm Internally Matched
• <0.3 dB Power Droop
Applications
• Marine Radar
• Weather Monitoring
• Air Traffic Control
• Maritime Vessel Traffic Control
• Port Security