CGHV22100P Datasheet(PDF) - Cree, Inc

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CGHV22100P Datasheet (PDF) - Cree, Inc

CGHV22100P Datasheet PDF - Cree, Inc


No. de pieza	CGHV22100P

Descarga	CGHV22100P Descarga

Tamaño del archivo	1006.64 Kbytes

Page	11 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

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Descripción Electrónicos

100 W, 1800-2200 MHz, GaN HEMT for LTE

CGHV22100P Datasheet (PDF)

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CGHV22100P Datasheet PDF - Cree, Inc


No. de pieza	CGHV22100P

Descarga	CGHV22100P Click to download

Tamaño del archivo	1006.64 Kbytes

Page	11 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

Logo

Descripción Electrónicos	100 W, 1800-2200 MHz, GaN HEMT for LTE

CGHV22100P Datasheet (HTML) - Cree, Inc

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Número de pieza similar - CGHV22100P

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Cree, Inc	CGHV22200	1Mb / 13P	200 W, 1800-2200 MHz, GaN HEMT for LTE Rev 1.0
	CGHV22200-TB	1Mb / 13P	200 W, 1800-2200 MHz, GaN HEMT for LTE Rev 1.0
	CGHV22200F	1Mb / 13P	200 W, 1800-2200 MHz, GaN HEMT for LTE Rev 1.0
	CGHV22200F-AMP	1Mb / 13P	200 W, 1800-2200 MHz, GaN HEMT for LTE Rev 1.0
	CGHV22200P	1Mb / 13P	200 W, 1800-2200 MHz, GaN HEMT for LTE Rev 1.0

Descripción similar - CGHV22100P

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Cree, Inc	CGHV27200	696Kb / 11P	200 W, 2500-2700 MHz, GaN HEMT for LTE Rev 0.1
	CGH21120F	1Mb / 13P	120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Rev 3.1
	CGH21240F	1Mb / 15P	240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Rev 3.0
	CGH25120F	1Mb / 12P	120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Rev 3.1
	CGHV22200	1Mb / 13P	200 W, 1800-2200 MHz, GaN HEMT for LTE Rev 1.0
	CGHV27100	1Mb / 11P	100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Rev 1.0
	CGHV27200	1Mb / 12P	200 W, 2500-2700 MHz, GaN HEMT for LTE Rev 1.0
NXP Semiconductors	A2G22S160-01SR3	761Kb / 18P	1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Rev. 1, 01/2022
WOLFSPEED, INC.	CGH25120F	3Mb / 12P	120 W, 2.3-2.7 GHz, GaN HEMT for WiMAX and LTE Rev. 3.4, 10-20-2022
WOLFSPEED, INC.	CGHV14500	3Mb / 20P	500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Rev. 5.0, 2022-7-27

Acerca de Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.

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