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CGHV27200 Datasheet (PDF) - Cree, Inc

CGHV27200 Datasheet PDF - Cree, Inc
No. de pieza CGHV27200
Descarga  CGHV27200 Descarga

Tamaño del archivo   696.2 Kbytes
Page   11 Pages
Fabricante Electrónico  CREE [Cree, Inc]
Página de inicio  http://www.cree.com/
Logo CREE - Cree, Inc
Descripción Electrónicos 200 W, 2500-2700 MHz, GaN HEMT for LTE

CGHV27200 Datasheet (PDF)

Go To PDF Page Descarga Datasheet
CGHV27200 Datasheet PDF - Cree, Inc

No. de pieza CGHV27200
Descarga  CGHV27200 Click to download

Tamaño del archivo   696.2 Kbytes
Page   11 Pages
Fabricante Electrónico  CREE [Cree, Inc]
Página de inicio  http://www.cree.com/
Logo CREE - Cree, Inc
Descripción Electrónicos 200 W, 2500-2700 MHz, GaN HEMT for LTE

CGHV27200 Datasheet (HTML) - Cree, Inc

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Número de pieza similar - CGHV27200

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Cree, Inc
CGHV27200-AMP CREE-CGHV27200-AMP Datasheet
1Mb / 12P
   200 W, 2500-2700 MHz, GaN HEMT for LTE
CGHV27200-TB CREE-CGHV27200-TB Datasheet
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CGHV27200F CREE-CGHV27200F Datasheet
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CGHV27200 CREE-CGHV27200_15 Datasheet
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Descripción similar - CGHV27200

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Cree, Inc
CGHV27200 CREE-CGHV27200_15 Datasheet
1Mb / 12P
   200 W, 2500-2700 MHz, GaN HEMT for LTE
CGHV27100 CREE-CGHV27100 Datasheet
1Mb / 11P
   100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
CGHV22200 CREE-CGHV22200 Datasheet
1Mb / 13P
   200 W, 1800-2200 MHz, GaN HEMT for LTE
CGH25120F CREE-CGH25120F Datasheet
1Mb / 12P
   120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
CGHV22100 CREE-CGHV22100 Datasheet
1,006Kb / 11P
   100 W, 1800-2200 MHz, GaN HEMT for LTE
CGHV27060MP CREE-CGHV27060MP Datasheet
1Mb / 8P
   60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications
CGH21240F CREE-CGH21240F Datasheet
1Mb / 15P
   240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
CGH21120F CREE-CGH21120F Datasheet
1Mb / 13P
   120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
logo
WOLFSPEED, INC.
CGHV35060MP WOLFSPEED-CGHV35060MP Datasheet
2Mb / 11P
   60 W, 2700-3800 MHz, 50 V GaN HEMT for S-Band Radar and LTE Base Stations
Rev. 2.4, 2022-12-2
logo
Cree, Inc
CGHV35060MP CREE-CGHV35060MP_16 Datasheet
1Mb / 8P
   60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
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Acerca de Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.




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