DESCRIPTION
The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.

FEATURES
● RDS(ON) = 0.180Ω @ VGS = 10V
● Ultra low gate charge(63nC max.)
● Low reverse transfer capacitance
   (CRSS = 91pF typical)
● Fast switching capability
● 100% avalanche energy specified
● Improved dv/dt capability
● 150°C operation temperature