STD3NK60Z Datasheet(PDF) - STMicroelectronics

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STD3NK60Z Datasheet (PDF) - STMicroelectronics

STD3NK60Z Datasheet PDF - STMicroelectronics


No. de pieza	STD3NK60Z

Descarga	STD3NK60Z Descarga

Tamaño del archivo	755.89 Kbytes

Page	15 Pages

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Descripción Electrónicos

N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

STD3NK60Z Datasheet (PDF)

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STD3NK60Z Datasheet PDF - STMicroelectronics


No. de pieza	STD3NK60Z

Descarga	STD3NK60Z Click to download

Tamaño del archivo	755.89 Kbytes

Page	15 Pages

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

Logo

Descripción Electrónicos	N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

STD3NK60Z Datasheet (HTML) - STMicroelectronics

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STD3NK60Z Detalles de producto

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

■ TYPICAL RDS(on) = 3.3 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING

Número de pieza similar - STD3NK60Z

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
SHENZHEN DOINGTER SEMIC...	STD3NK60Z	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
STMicroelectronics	STD3NK60Z-1	936Kb / 34P	N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages Rev 6 - August 2018
STMicroelectronics	STD3NK60ZD	350Kb / 14P	N-channel 600 V, 3.3 廓, 2.4 A, DPAK SuperFREDMesh??Power MOSFET
VBsemi Electronics Co.,...	STD3NK60ZD	1Mb / 9P	Power MOSFET
Inchange Semiconductor ...	STD3NK60ZT4	321Kb / 2P	isc N-Channel MOSFET Transistor

Descripción similar - STD3NK60Z

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STP4NK60Z	759Kb / 16P	N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET
	STP9NK60Z	581Kb / 13P	N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET June 2002
	STB5NK50Z	618Kb / 14P	N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET
	STP13NK60Z	657Kb / 14P	N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET
	STP5NK40Z	601Kb / 13P	N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET
	STP3NK90Z	613Kb / 13P	N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET
	STP4NM60	548Kb / 12P	N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh?줡ower MOSFET
	STP7NK40Z	605Kb / 13P	N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET
	STP4NK50Z	664Kb / 13P	N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET
	STP5NK60Z	585Kb / 12P	N-CHANNEL 600V - 1.2W - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH?줡ower MOSFET

Acerca de STMicroelectronics

STMicroelectronics es un fabricante multinacional de electrónica y semiconductores con sede en Ginebra, Suiza.

La compañía ofrece una amplia gama de productos que incluyen microcontroladores, sensores, amplificadores de energía y circuitos integrados para diversas aplicaciones en los mercados automotrices, industriales y de consumo.

Fundada en 1987, Stmicroelectronics tiene operaciones en más de 100 países y es una de las compañías semiconductores más grandes del mundo.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.

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