1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.
NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A
and optimizedwith low gate resistance (RG) for fast-switching applications.
2. Features and benefits
• Optimized for low RDSon and low gate resistance (RG)
• Fast switching – reduced switching losses
• Strong linear-mode (SOA) rating
• Low leakage < 1 μA at 25 °C
• Low spiking and ringing for low EMI designs
• Optimized for 4.5 V gate drive
• 150 A continuous ID(max) rating
• High reliability copper-clip bonded and solder die attach LFPAK33 package
• Qualified to 175 °C
• Exposed leads for optimal visual solder inspection
3. Applications
• Synchronous buck regulator
• Synchronous rectifier in AC-DC and DC-DC applications
• BLDC (brushless) motor control
• eFuse and battery protection