These are N−Channel logic level power MOSFETs manufactured
using the MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum utilization
of silicon, resulting in outstanding performance. They were designed
for use with logic level (5 V) driving sources in applications such as
programmable controllers, switching regulators, switching converters,
motor relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide design
which provides full rated conductance at gate biases in the 3 V to 5 V
range, thereby facilitating true on−off power control directly from
logic circuit supply voltages.
Formerly developmental type TA09871.

Features
• 16 A, 50 V
• rDS(ON) = 0.047 
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5 V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
♦ TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”