| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Fairchild Semiconductor |
FDMC8360L
|
344Kb / 7P |
N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m
|
ON Semiconductor |
NTBGS002N06C
|
231Kb / 7P |
MOSFET - Power, Single N-Channel, D2PAK7 60 V, 2.1 m, 211 A
November, 2020 ??Rev. 1 |
|
NTBGS004N10G
|
306Kb / 8P |
MOSFET - Power, Single N-Channel, D2PAK7 100 V, 4.1 m, 203 A
January, 2021 ??Rev. 0 |
|
NTBLS1D7N08H
|
364Kb / 8P |
MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m, 203 A
January, 2021 ??Rev. 2 |
|
NTD5C434N
|
233Kb / 7P |
MOSFET ??Power, Single, N-Channel 40 V, 2.1 m, 160 A
May, 2019 ??Rev. 0 |
|
NTMFS6H836N
|
185Kb / 7P |
MOSFET - Power, Single N-Channel 80 V, 6.7 m, 80 A
June, 2020-Rev. 2 |
|
NTMFS6H836NL
|
184Kb / 7P |
MOSFET - Power, Single N-Channel 80 V, 6.2 m, 77 A
December, 2019-Rev. 0 |
|
NTTFS2D1N04HL
|
507Kb / 7P |
MOSFET - Single N-Channel 40 V, 2.1 m, 150 A
May, 2020 ??Rev. 1 |
|
NTMFS2D5N08X
|
146Kb / 6P |
MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.1 m, 181 A
October, 2023 - Rev. 0 |
|
NVMFWS2D1N08X
|
258Kb / 8P |
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.1 m, 181 A
October, 2023 - Rev. 0 |
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