FEATURES
dv/dt and di/dt Control
Undervoltage Protection
Short-Circuit Protection
trr Shoot-Through Current Limiting
Low Quiescent Current
CMOS Compatible Inputs
Compatible with Wide Range of MOSFET Devices
Bootstrap and Charge Pump Compatible
(High-Side Drive)
DESCRIPTION
The Si9910 Power MOSFET driver provides optimized gate
drive signals, protection circuitry and logic level interface. Very
low quiescent current is provided by a CMOS buffer and a
high-current emitter-follower output stage. This efficiency
allows operation in high-voltage bridge applications with
“bootstrap” or “charge-pump” floating power supply
techniques.
The non-inverting output configuration minimizes current
drain for an n-channel “on” state. The logic input is internally
diode clamped to allow simple pull-down in high-side drives.
Fault protection circuitry senses an undervoltage or output
short-circuit condition and disables the power MOSFET.
Addition of one external resistor limits maximum di/dt of the
external Power MOSFET. A fast feedback circuit may be used
to limit shoot-through current during trr (diode reverse recovery
time) in a bridge configuration.
The Si9910 is available in both standard and lead (Pb)-free
8-pin plastic DIP and SOIC packages which are specified to
operate over the industrial temperature range of −40 C to
85 C.