| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 SHENZHEN DOINGTER SEMIC... |
ZC004TG
|
1Mb / 4P |
N-Channel MOSFET uses advanced SGT to minimize on-state reistance
|
|
ZC005TG
|
1Mb / 5P |
N-Channel MOSFET uses advanced SGT to minimize on-state reistance
|
|
AON7534
|
884Kb / 6P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance
|
|
MTB4D0N03BV8
|
2Mb / 5P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance
|
|
RU6050L
|
1Mb / 5P |
N-Channel MOSFET uses advanced SGT technology
|
|
SIS456DN
|
1Mb / 5P |
N-Channel MOSFET uses advanced SGT to minimize on-state reistance
|
|
SM1A06NSU
|
1Mb / 5P |
N-Channel MOSFET uses advanced SGT technology
|
|
TPN11003NL
|
1Mb / 4P |
N-Channel MOSFET uses advanced trench technology to minimize on-state resistance
|
|
UPA2820T1S
|
1Mb / 5P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance
|
|
WSD3066DN
|
2Mb / 5P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance
|