PXAC201202FC Datasheet(PDF) - Cree, Inc

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PXAC201202FC Datasheet (PDF) - Cree, Inc

PXAC201202FC Datasheet PDF - Cree, Inc


No. de pieza	PXAC201202FC

Descarga	PXAC201202FC Descarga

Tamaño del archivo	590.04 Kbytes

Page	10 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

Logo

Descripción Electrónicos

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz

PXAC201202FC Datasheet (PDF)

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PXAC201202FC Datasheet PDF - Cree, Inc


No. de pieza	PXAC201202FC

Descarga	PXAC201202FC Click to download

Tamaño del archivo	590.04 Kbytes

Page	10 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

Logo

Descripción Electrónicos	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz

PXAC201202FC Datasheet (HTML) - Cree, Inc

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PXAC201202FC Datasheet HTML 10Page - Cree, Inc

Número de pieza similar - PXAC201202FC

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PXAC201202FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201202FCV2R0	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201202FCV2R0XTMA1	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201202FCV2R250	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201202FCV2R250XTMA1	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22

Descripción similar - PXAC201202FC

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PXFC192207FH	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 ??1990 MHz Rev. 04.1, 2016-06-22
	PXAC261212FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz Rev. 02.2, 2016-06-22
	PXAC201202FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PTFC210202FC	655Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22
	PXAC213308FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Rev. 02, 2016-05-04
Cree, Inc	PXAC213308FV	518Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz
	PXAC261212FC	557Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
WOLFSPEED, INC.	PTFC210202FC-V1	828Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28
WOLFSPEED, INC.	PXAE213708NB	707Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20

Acerca de Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.

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