PXAC261212FC Datasheet(PDF) - Cree, Inc

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PXAC261212FC Datasheet (PDF) - Cree, Inc

PXAC261212FC Datasheet PDF - Cree, Inc


No. de pieza	PXAC261212FC

Descarga	PXAC261212FC Descarga

Tamaño del archivo	557.7 Kbytes

Page	10 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

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Descripción Electrónicos

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz

PXAC261212FC Datasheet (PDF)

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PXAC261212FC Datasheet PDF - Cree, Inc


No. de pieza	PXAC261212FC

Descarga	PXAC261212FC Click to download

Tamaño del archivo	557.7 Kbytes

Page	10 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

Logo

Descripción Electrónicos	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz

PXAC261212FC Datasheet (HTML) - Cree, Inc

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PXAC261212FC Datasheet HTML 8Page - Cree, Inc

PXAC261212FC Datasheet HTML 9Page - Cree, Inc

PXAC261212FC Datasheet HTML 10Page - Cree, Inc

Número de pieza similar - PXAC261212FC

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PXAC261212FC	210Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02.1, 2014-06-30
	PXAC261212FCV1R0	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz Rev. 02.2, 2016-06-22
	PXAC261212FCV1R0XTMA1	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz Rev. 02.2, 2016-06-22
	PXAC261212FCV1R250	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz Rev. 02.2, 2016-06-22
	PXAC261212FCV1R250XTMA1	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz Rev. 02.2, 2016-06-22

Descripción similar - PXAC261212FC

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PXAC261212FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz Rev. 02.2, 2016-06-22
	PXAC261002FC	162Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz Rev. 03.3, 2016-06-15
	PTFC262808SV	180Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 02.1, 2013-08-02
	PTFC262157FH	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz Rev. 03.1, 2016-06-21
	PTFC261402FC	231Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz Rev. 05, 2016-06-21
	PTFC260202FC	870Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ??2690 MHz Rev. 03.3, 2016-06-21
	PTFC262808FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 03, 2016-06-22
Cree, Inc	PXAC261002FC	634Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
	PTFC261402FC	322Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz
	PTFC262808FV	806Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz

Acerca de Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.

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