PTFC262808FV Datasheet(PDF) - Cree, Inc

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PTFC262808FV Datasheet (PDF) - Cree, Inc

PTFC262808FV Datasheet PDF - Cree, Inc


No. de pieza	PTFC262808FV

Descarga	PTFC262808FV Descarga

Tamaño del archivo	806.39 Kbytes

Page	8 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

Logo

Descripción Electrónicos

Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz

PTFC262808FV Datasheet (PDF)

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PTFC262808FV Datasheet PDF - Cree, Inc


No. de pieza	PTFC262808FV

Descarga	PTFC262808FV Click to download

Tamaño del archivo	806.39 Kbytes

Page	8 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

Logo

Descripción Electrónicos	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz

PTFC262808FV Datasheet (HTML) - Cree, Inc

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Número de pieza similar - PTFC262808FV

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PTFC262808FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 03, 2016-06-22

Descripción similar - PTFC262808FV

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PXAC260602FC	551Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz Rev. 02.4, 2016-06-22
	PTFC262808SV	180Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 02.1, 2013-08-02
	PTFC262157FH	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz Rev. 03.1, 2016-06-21
	PTFC261402FC	231Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz Rev. 05, 2016-06-21
	PTFC262808FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 03, 2016-06-22
Cree, Inc	PTAC260302FC	636Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 ??2690 MHz
	PTFC261402FC	322Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz
	PTFC262157FH	616Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz
	PXAE263708NB	289Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz
WOLFSPEED, INC.	PXAE263708NB	612Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23

Acerca de Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.

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