| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Vishay Siliconix |
TS8510VB-SD-F
|
88Kb/4P |
Specification of High Power IR Emitting Diode Chip
06-Feb-18 |
|
TS8510VB-SD-F
|
89Kb/4P |
Specification of High Power IR Emitting Diode Chip
06-Feb-18 |
|
TS8510VB
|
88Kb/4P |
Specification of High Power IR Emitting Diode Chip
06-Feb-18 |
|
TS8510VB
|
89Kb/4P |
Specification of High Power IR Emitting Diode Chip
06-Feb-18 |
|
TS8514VB
|
90Kb/4P |
Specification of High Power IR Emitting Diode Chip
11-Apr-17 |
|
TS8514VB
|
86Kb/4P |
Specification of High Power IR Emitting Diode Chip
02-Mar-2020 |
|
TS8514VB
|
87Kb/4P |
Specification of High Power IR Emitting Diode Chip
02-Mar-2020 |
|
TS8514VB-SD-F
|
86Kb/4P |
Specification of High Power IR Emitting Diode Chip
02-Mar-2020 |
|
TS8514VB-SD-F
|
87Kb/4P |
Specification of High Power IR Emitting Diode Chip
02-Mar-2020 |
|
TS8514VB-SF-F
|
90Kb/4P |
Specification of High Power IR Emitting Diode Chip
11-Apr-17 |
|
TS8514VB
|
86Kb/4P |
Specification of High Power IR Emitting Diode Chip
02-Mar-2020 |
|
TS8514VB
|
87Kb/4P |
Specification of High Power IR Emitting Diode Chip
02-Mar-2020 |
|
TS8520VA
|
95Kb/4P |
Specification of High Power IR Emitting Diode Chip
20-Feb-12 |
|
TS8520VA-SF-F
|
95Kb/4P |
Specification of High Power IR Emitting Diode Chip
20-Feb-12 |
|
TS8542VA
|
101Kb/4P |
Specification of High Power IR Emitting Diode Chip
20-Feb-12 |
|
TS8542VA-SF-F
|
101Kb/4P |
Specification of High Power IR Emitting Diode Chip
20-Feb-12 |
ABB |
TS8/12
|
779Kb/5P |
TS8/12 Non-inherently short-circuit proof bell transformer
11/29/2019 |
|
TS8/24
|
795Kb/5P |
TS8/24 Non-inherently short-circuit proof bell transformer
11/29/2019 |
|
TS8/8
|
794Kb/5P |
TS8/8 Non-inherently short-circuit proof bell transformer
11/29/2019 |
Bothhand USA, LP. |
TS800-06HF
|
224Kb/2P |
10 BASE-T SMD ETHERNET TRANSFORMER
|
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