NE0-R Datasheet, PDF

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	NE004	350Kb/6P	GaAs MES FET 1988
	NE004100-6	350Kb/6P	GaAs MES FET 1988
	NE0041600-6	350Kb/6P	GaAs MES FET 1988
	NE004200-6	350Kb/6P	GaAs MES FET 1988
	NE004800-6	350Kb/6P	GaAs MES FET 1988
	NE004800-8	350Kb/6P	GaAs MES FET 1988
NEC	NE021	635Kb/14P	NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	NE021	184Kb/12P	HIGH INSERTION GAIN: 18.5 dB at 500 MHz
List of Unclassifed Man...	NE021	171Kb/12P	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	NE02100	184Kb/12P	HIGH INSERTION GAIN: 18.5 dB at 500 MHz
List of Unclassifed Man...	NE02100	171Kb/12P	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Advanced Semiconductor	NE02103	38Kb/1P	NPN SILICON RF TRANSISTOR
California Eastern Labs	NE02107	184Kb/12P	HIGH INSERTION GAIN: 18.5 dB at 500 MHz
List of Unclassifed Man...	NE02107	171Kb/12P	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	NE02107B	184Kb/12P	HIGH INSERTION GAIN: 18.5 dB at 500 MHz
List of Unclassifed Man...	NE02107B	171Kb/12P	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	NE02133-T1B	184Kb/12P	HIGH INSERTION GAIN: 18.5 dB at 500 MHz
List of Unclassifed Man...	NE02133-T1B	171Kb/12P	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Advanced Semiconductor	NE02135	112Kb/1P	NPN SILICON RF TRANSISTOR
California Eastern Labs	NE02135	184Kb/12P	HIGH INSERTION GAIN: 18.5 dB at 500 MHz

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