G4BPI35-SD-R Datasheet, PDF

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Omron Electronics LLC	G4B-112T-C-US	137Kb/5P	General Purpose Relay
	G4B-112T-US	137Kb/5P	General Purpose Relay
	G4B-112T1-C-US	137Kb/5P	General Purpose Relay
	G4B-112T1-FD-C-US-RP	137Kb/5P	General Purpose Relay
	G4B-112T1-FD-US-RP	137Kb/5P	General Purpose Relay
	G4B-112T1-FD-US-RPAC24	237Kb/5P	General Purpose Relay
	G4B-112T1-US	137Kb/5P	General Purpose Relay
	G4B-112TP-C-US	137Kb/5P	General Purpose Relay
	G4B-112TP-FD-C-US-RP	137Kb/5P	General Purpose Relay
	G4B-112TP-FD-US-RP	137Kb/5P	General Purpose Relay
	G4B-112TP-US	137Kb/5P	General Purpose Relay
International Rectifier	G4BC30KD	196Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
	G4BC30UD	234Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	G4BC30W	139Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
	G4BC30W	275Kb/9P	INSULATED GATE BIPOLAR TRANSISTOR
	G4BC30W	287Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR
	G4BC40S	157Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
	G4BC40U	169Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

Enlace URL