| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Intersil Corporation |
G20N120
|
97Kb/8P |
45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
October 1998 |
|
G20N120
|
83Kb/7P |
63A, 1200V, NPT Series N-Channel IGBT
January 2000 |
|
G20N120
|
93Kb/7P |
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
January 2000 |
|
G20N120
|
167Kb/5P |
34A, 1200V N-Channel IGBT
April 1995 |
Fairchild Semiconductor |
G20N120
|
121Kb/8P |
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
Goford Semiconductor |
G20N03D2
|
727Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
|
G20N03K
|
514Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
|
G20N06D52
|
987Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
Vishay Siliconix |
G20N50C
|
198Kb/8P |
Power MOSFET
20-Nov-17 |
Infineon Technologies A... |
G20N60
|
364Kb/12P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
Rev. 2.4 Nov 09 |
Fairchild Semiconductor |
G20N60B3
|
179Kb/7P |
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
|
G20N60B3D
|
179Kb/7P |
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
|
G20N60C3
|
144Kb/8P |
45A, 600V, UFS Series N-Channel IGBT
|
Infineon Technologies A... |
G20N60HS
|
426Kb/11P |
High Speed IGBT in NPT-technology
Rev.2 Aug-02 |
ZF Friedrichshafen AG |
G20-00A0
|
532Kb/3P |
Double Pole General Purpose
|
|
G20-00H0
|
532Kb/3P |
Double Pole General Purpose
|
|
G20-00J0
|
532Kb/3P |
Double Pole General Purpose
|
|
G20-00K0
|
532Kb/3P |
Double Pole General Purpose
|
|
G20-00M0
|
532Kb/3P |
Double Pole General Purpose
|
|
G20-01A0
|
532Kb/3P |
Double Pole General Purpose
|
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