| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Diodes Incorporated |
DMN2114SN-7
|
155Kb/4P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30829 Rev. 4 - 2 |
|
DMN2114SN-7
|
204Kb/4P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30829 Rev. 3 - 2 |
|
DMN2114SN_0709
|
155Kb/4P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30829 Rev. 4 - 2 |
|
DMN2114SN
|
96Kb/4P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Rev erse |
|
DMN2112SN
|
228Kb/3P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30830 Rev. 3 - 2 |
|
DMN2112SN
|
222Kb/4P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30830 Rev. 4 - 2 |
 ZP Semiconductor |
DMN2112SN
|
84Kb/1P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
 Diodes Incorporated |
DMN2112SN
|
441Kb/5P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Rev 7 |
|
DMN2112SN-7
|
441Kb/5P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Rev 7 |
|
DMN2112SN-7
|
228Kb/3P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30830 Rev. 3 - 2 |
|
DMN2112SN_0711
|
222Kb/4P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30830 Rev. 4 - 2 |
|
DMN2112SN
|
216Kb/5P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Rev 6 |
|
DMN2112SN
|
441Kb/5P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Rev 7 |
|
DMN2100UDM
|
117Kb/4P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS31186 Rev. 4 - 2 |
|
DMN2100UDM-7
|
117Kb/4P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS31186 Rev. 4 - 2 |
|
DMN2100UDM
|
207Kb/6P |
N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 5 |
|
DMN2104L
|
130Kb/4P |
N-CHANNEL ENHANCEMENT MODE MOSFET
DS31560 Rev. 1 - 2 |
|
DMN2104L-7
|
130Kb/4P |
N-CHANNEL ENHANCEMENT MODE MOSFET
DS31560 Rev. 1 - 2 |
|
DMN2120UFCL
|
523Kb/7P |
20V N-CHANNEL ENHANCEMENT MODE MOSFET
July 2019 Rev. 3 - 2 |
|
DMN2120UFCL-7
|
523Kb/7P |
20V N-CHANNEL ENHANCEMENT MODE MOSFET
July 2019 Rev. 3 - 2 |