B-V1-R2 Datasheet, PDF

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
WOLFSPEED, INC.	PTRA087008NB-V1-R2	731Kb/11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz Rev. 03.4, 2022-02-13
	PTRA095908NB-V1-R2	739Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960 MHz Rev. 02.2, 2022-02-13
	PTRA097008NB-V1-R2	556Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz Rev. 04, 2023-06-22
	PXAE183708NB-V1-R2	667Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 48 V, 1805 – 1880 MHz Rev. 04, 2022-12-20
Cree, Inc	PXAE213708NB-V1-R2	529Kb/5P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz
WOLFSPEED, INC.	PXAE213708NB-V1-R2	707Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20
Cree, Inc	PXAE263708NB-V1-R2	289Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz
WOLFSPEED, INC.	PXAE263708NB-V1-R2	612Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23

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