| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Toshiba Semiconductor |
2SC3182
|
91Kb/2P |
SILICON NPN TRIPLE DIFFUSED TYPE
|
 Savantic, Inc. |
2SC3182
|
168Kb/4P |
Silicon NPN Power Transistors
|
|
2SC3182
|
170Kb/4P |
Silicon NPN Power Transistors
|
 Inchange Semiconductor ... |
2SC3182
|
210Kb/2P |
Good Linearity of hFE
|
 New Jersey Semi-Conduct... |
2SC3182
|
134Kb/2P |
Silicon NPN Power Transistor
|
 Inchange Semiconductor ... |
2SC3182N
|
168Kb/4P |
Silicon NPN Power Transistors
|
 Savantic, Inc. |
2SC3182N
|
168Kb/4P |
Silicon NPN Power Transistors
|
 Quanzhou Jinmei Electro... |
2SC3182N
|
203Kb/4P |
Silicon NPN Power Transistors
|
 Inchange Semiconductor ... |
2SC3182N
|
176Kb/4P |
Silicon NPN Power Transistors
|
 Savantic, Inc. |
2SC3182N
|
170Kb/4P |
Silicon NPN Power Transistors
|
 New Jersey Semi-Conduct... |
2SC3182N
|
130Kb/2P |
Silicon NPN Power Transistor
|
 Quanzhou Jinmei Electro... |
2SC3182N
|
203Kb/4P |
Silicon NPN Power Transistors
|
|
2SC3182N_2014
|
203Kb/4P |
Silicon NPN Power Transistors
|