| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Cree, Inc |
GTVA212701FA-V2-R2
|
434Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz
|
WOLFSPEED, INC. |
GTVA212701FA-V2-R2
|
566Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz
Rev. 04.2, 2022-1-27 |
Cree, Inc |
GTVA262701FA-V2-R2
|
489Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
|
WOLFSPEED, INC. |
GTVA262701FA-V2-R2
|
506Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Rev. 04.3, 2022-1-27 |
Cree, Inc |
GTVA262711FA-V2-R2
|
464Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
|
WOLFSPEED, INC. |
GTVA262711FA-V2-R2
|
594Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz
Rev. 04.4, 2022-1-27 |
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