| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Unisonic Technologies |
15N10G-TN3-T
|
182Kb/5P |
14.7A, 100V (D-S) N-CHANNEL POWER MOSFET
|
Shenzhen Tuofeng Semico... |
15N10B
|
3Mb/6P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fe ,2018 V1.1 |
|
15N10G
|
3Mb/5P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Mar ,2018 V1.0 |
Unisonic Technologies |
15N10L-TN3-R
|
182Kb/5P |
14.7A, 100V (D-S) N-CHANNEL POWER MOSFET
|
VBsemi Electronics Co.,... |
15N10L-TN3-R
|
1,008Kb/7P |
N-Channel 100 V (D-S) MOSFET
|
Unisonic Technologies |
15N10L-TN3-T
|
182Kb/5P |
14.7A, 100V (D-S) N-CHANNEL POWER MOSFET
|
VBsemi Electronics Co.,... |
15N10
|
1,013Kb/7P |
N-Channel 100 V (D-S) MOSFET
|
Unisonic Technologies |
15N10
|
182Kb/5P |
14.7A, 100V (D-S) N-CHANNEL POWER MOSFET
|
DIYI Electronic Technol... |
15N10
|
1Mb/8P |
100V N-Channel Power MOSFET
|
VBsemi Electronics Co.,... |
15N10
|
1,022Kb/8P |
P-Channel 30 V (D-S) MOSFET
|
|
15N10
|
1,013Kb/7P |
N-Channel 100 V (D-S) MOSFET
|
Shenzhen Tuofeng Semico... |
15N10
|
3Mb/5P |
N-Channel Enhancement Mode Power MOSFET
Mar ,2018 V1.0 |
Guangdong Youtai Semico... |
15N10
|
660Kb/5P |
The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
|
SeCoS Halbleitertechnol... |
15N10
|
696Kb/4P |
15A, 100V, RDS(ON) 110mΩ N-Ch Enhancement Mode Power MOSFET
07-Mar-2013 Rev. E |
Inchange Semiconductor ... |
15N12
|
49Kb/2P |
Fast Switching
|
|
15N15
|
49Kb/2P |
Fast Switching
|
VBsemi Electronics Co.,... |
15N03
|
1,015Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
|
15N03GH
|
1,016Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
|
15N03GH-HF
|
1,015Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
|
15N03GJ
|
960Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
Spanish ▼ 
English
Chinese
German
Japanese
Russian
Korean
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand