Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Stanson Technology |
STP4441
|
642Kb/6P
|
P Channel Enhancement Mode MOSFET
|
Search Partnumber :
Start with "STP4441" -
Total : 100 ( 1/5 Page) |
Stanson Technology |
STP4403
|
321Kb/6P |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
STP4407
|
545Kb/6P |
The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
VBsemi Electronics Co.,... |
STP4407
|
898Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STP4407A
|
1Mb/5P |
P-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STP4407A
|
898Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
SamHop Microelectronics... |
STP4410
|
139Kb/10P |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Stanson Technology |
STP4435
|
597Kb/6P |
P Channel Enhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
STP4435
|
901Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
Stanson Technology |
STP4435A
|
311Kb/6P |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
SHENZHEN DOINGTER SEMIC... |
STP4435A
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STP4435A
|
901Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
STMicroelectronics |
STP400N4F6
|
181Kb/11P |
N-channel 40 V, 120 A STripFET??VI DeepGATE?? Power MOSFET in I짼PAK and TO-220 packages
August 2012 Rev 1 |
VBsemi Electronics Co.,... |
STP40N03L
|
984Kb/7P |
N-Channel 30-V (D-S) MOSFET
|
STMicroelectronics |
STP40N03L-20
|
65Kb/7P |
N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR
|
VBsemi Electronics Co.,... |
STP40N03L-20
|
984Kb/7P |
N-Channel 30-V (D-S) MOSFET
|
STMicroelectronics |
STP40N06
|
354Kb/7P |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
May 1993 |
STP40N06FI
|
354Kb/7P |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
May 1993 |
STP40N10
|
340Kb/10P |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
July 1993 |
STP40N10FI
|
340Kb/10P |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
July 1993 |