| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Stanson Technology |
STN4130
|
1Mb/7P
|
N Channel Enhancement Mode MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STN4130
|
2Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STN4130
|
898Kb/6P
|
N-Channel 60-V (D-S) MOSFET
|
| Search Partnumber :
Start with "STN4130" -
Total : 78 ( 1/4 Page) |
Stanson Technology |
STN4102
|
410Kb/6P |
N Channel Enhancement Mode MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STN4102
|
756Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STN4102
|
1,018Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
Stanson Technology |
STN410D
|
498Kb/8P |
N Channel Enhancement Mode MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STN410D
|
986Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
|
STN4110
|
1Mb/5P |
N-Channel MOSFET uses advanced SGT technology
|
Stanson Technology |
STN4110
|
876Kb/8P |
N Channel Enhancement Mode MOSFET
|
|
STN4186D
|
754Kb/9P |
N Channel Enhancement Mode MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STN4186D
|
2Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STN4186D
|
1,003Kb/7P |
N-Channel 40-V (D-S) MOSFET
|
Stanson Technology |
STN4260
|
735Kb/6P |
N Channel Enhancement Mode MOSFET
|
|
STN4346
|
352Kb/7P |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4392
|
383Kb/7P |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
SHENZHEN DOINGTER SEMIC... |
STN4392
|
920Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
Stanson Technology |
STN4402
|
361Kb/6P |
N Channel Enhancement Mode MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STN4402
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STN4402
|
1Mb/9P |
N-Channel 20V (D-S) MOSFET
|
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