| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 SemiHow Co.,Ltd. |
HFD2N65S
|
871Kb/8P
|
650V N-Channel MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
HFD2N65S
|
1Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
| Search Partnumber :
Start with "HFD2N65S" -
Total : 108 ( 1/6 Page) |
 SemiHow Co.,Ltd. |
HFD2N65F
|
211Kb/8P |
600V N-Channel MOSFET
|
|
HFD2N65F
|
214Kb/8P |
650V N-Channel MOSFET
|
|
HFD2N65U
|
341Kb/10P |
Superior Avalanche Rugged Technology
|
|
HFD2N60
|
655Kb/8P |
600V N-Channel MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
HFD2N60
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 SemiHow Co.,Ltd. |
HFD2N60F
|
287Kb/8P |
600V N-Channel MOSFET
|
|
HFD2N60S
|
878Kb/8P |
600V N-Channel MOSFET
|
|
HFD2N60U
|
406Kb/11P |
Superior Avalanche Rugged Technology
|
|
HFD2N70S
|
854Kb/8P |
700V N-Channel MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
HFD2N70S
|
766Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
 SemiHow Co.,Ltd. |
HFD2N90
|
251Kb/9P |
900V N-Channel MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
HFD2N90
|
834Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
 Hongfa Technology |
HFD2-005-S-L2
|
68Kb/4P |
SUMINIATURE DIP RELAY
|
|
HFD2/003-M-L1-A
|
67Kb/4P |
SUBMINIATURE DIP RELAY
|
|
HFD2/003-M-L1-D
|
67Kb/4P |
SUBMINIATURE DIP RELAY
|
|
HFD2/003-M-L2-A
|
67Kb/4P |
SUBMINIATURE DIP RELAY
|
|
HFD2/003-M-L2-D
|
67Kb/4P |
SUBMINIATURE DIP RELAY
|
|
HFD2/003-S-L1-A
|
67Kb/4P |
SUBMINIATURE DIP RELAY
|