Reflective Photosensors (Photo Reflectors)

1

Publication date: April 2004

SHG00057

BED

CNB2003

Reflective photosensor

Non-contact point SW, object sensing

■ Features

• Reflow-compatible reflective photosensor

• Ultraminiature, thin type: 2.7 mm × 3.4 mm (height: 1.5 mm)

■ Absolute Maximum Ratings T

a

= 25°C

Unit: mm

Parameter

Symbol

Rating

Unit

Input (Light

Reverse voltage

6V

emitting diode) Forward current

50

mA

1

75

mW

Output (Photo Collector-emitter voltage

35

V

transistor)

(Base open)

Emitter-collector voltage

6V

(Base open)

Collector current

30

mA

2

75

mW

Temperature

Operating ambient temperature

−25 to +85

°C

Storage temperature

−40 to +100

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Input

Forward voltage

1.2

1.4

V

characteristics Reverse current

= 3 V

10

µA

Output

Collector-emitter cutoff current

1.0

µA

characteristics (Base open)

Transfer

1

= 2 V, I

F

= 4 mA, R

L

= 100 Ω, d = 1 mm 0.52

15.00

mA

characteristics Dark current

= 2 V, I

F

= 4 mA, R

L

= 100 Ω

5.0

µA

= 4 mA, I

C

= 0.5 mA

1.2

V

2

120

µs

2

115

(Note) Tolerance unless otherwise specified is

±0.2

1: Anode

2: Cathode

3: Emitter

4: Collector

PRSMW104-003 Package

3.4

1.8

13

24

0.15

0.7

0.5

Color of rank

1.5

0.85

Chip

center

C0.5

I

F

50

Ω

Sig. in

V

CC

d

= 1 mm

Evaporated Al

Glass plate

Sig.

out

R

L

V

CC

I

C

d

= 1 mm

Evaporated Al

Glass plate

R

L

10%

90%

t

r

t

f

t

t

Sig. out

Sig. in

■ Electrical-Optical Characteristics T

Note) 1. Input and output are handled electrically.

2. This product is not designed to withstand radiation

3. *1: Output current measurement

*2: Switching time

method

measurement circuit

*3: Rank classification

Rank

Q

R

S

0.52 to 1.94 1.45 to 5.40 4.00 to 15.00

Color

Orange

White

Light blue

Note) *1: Input power derating ratio is

1.0 mW/

°C at T

a

≥ 25°C.

*2: Output power derating ratio is

1.0 mW/

°C at T