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2CL80KV/0.2A Datasheet(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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2CL80KV/0.2A Datasheet(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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1 / 2 page  2CL80KV/0.2A 200mA80kV High Voltage Medium Current Standard Rectifiers GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-08 1 / 2 INTRODUCE: HVGT high voltage silicon rectifier assembly is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage design. 3. Power frequency ratio. 4. Conform to RoHS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. Power doubler circuit. 2. Power supply of laser equipment . 3. General purpose high voltage rectifier. 4. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 7.2 grams (approx). SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME: HVS-080960H MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 80 kV Average Forward Current Maximum IFAVM TA=40°C 200 mA Suege Current IFSM TA=25°C; Half-Sine Wave; 8.3mS 6.0 A Junction Temperature TJ 125 °C Allowable Operation Case Temperature Tc -40~+125 °C Storage Temperature TSTG -40~+125 °C ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VF at 25°C; at IF(AV) 96 V Maximum Reverse Current IR1 at 25°C; at VRRM 2.0 uA IR2 at 100°C; at VRRM 50 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz -- pF |
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