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SMP30-180 Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza SMP30-180
Descripción Electrónicos  TELECOM EQUIPMENT PROTECTION: TRISIL
PDF  8 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SMP30-180 Datasheet(HTML) 4 Page - STMicroelectronics

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SMP30-xxx
4/8
Type
IRM @VRM
max
IR @VR MAX
Note 1
DYNAMIC
VBO @IBO
max
Note 2
STATIC
VBO @IBO
max
Note 3
IH
min
Note 4
C
typ.
Note 5
C
typ.
Note 6
µA
V
µA
V
V
mA
V
mA
mA
pF
pF
SMP30-62
2
56
50
62
85
800
82
800
150
20
40
SMP30-68
61
68
93
90
150
20
40
SMP30-100
90
100
135
133
150
16
35
SMP30-120
108
120
160
160
150
16
30
SMP30-130
117
130
173
173
150
14
30
SMP30-180
162
180
235
240
150
14
25
SMP30-200
180
200
262
267
150
12
25
SMP30-220
198
220
285
293
150
12
25
SMP30-240
216
240
300
320
150
12
25
SMP30-270
243
270
350
360
150
12
25
Note 1:
IR measured at VR guarantee VBRmin ≥ VR
Note 2:
See functional breakover voltage test circuit 1.
Note 3:
See test circuit 2.
Note 4:
See functional holding current test circuit 3.
Note 5:
VR = 50V bias,VRMS = 1V, F = 1MHz.
Note 6:
VR = 2V bias, VRMS = 1V, F = 1MHz
ELECTRICAL PARAMETERS (Tamb = 25°C)
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
0
5
10
15
20
F=50Hz
t(S)
I
(A)
TSM
Fig. 1: Non repetitive surge peak on-state current
versus overload duration (Tj initial = 25°C)
01
234
56
789
10
1
2
5
10
20
50
V (V)
T
I (A)
T
Tj=25°C
Fig. 2: On-state voltage versus on-state current
(typical values).



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