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2CL82 Datasheet(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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2CL82 Datasheet(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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1 / 2 page  2CL82 5.0mA 30kV 100nS--High Voltage Silicon Rectifier Diode GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-08 1 / 2 INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. SIZE: (Unit:mm) ： HVGT NAME: DO-312 FEATURES: 1. High reliability design. 2. High voltage design. 3. High frequency . 4. Conform to RoHS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. High voltage multiplier circuit 2. Electrostatic generator circuit . 3. General purpose high voltage rectifier. 4. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.30 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 30 kV Average Forward Current Maximum IFAVM TA=25°C 5.0 mA TOIL=--°C -- mA Suege Current IFSM TA=25°C; Half-Sine Wave; 8.3mS 0.5 A Junction Temperature TJ -40~+125 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature TSTG -40~+125 °C ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VF at 25°C; at IF(AV) 55 V Maximum Reverse Current IR1 at 25°C; at VRRM 2.0 uA IR2 at 100°C; at VRRM 5.0 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 100 nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz 1.0 pF |
Número de pieza similar - 2CL82_17 |
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Descripción similar - 2CL82_17 |
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