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CRO2AM Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

No. de pieza CRO2AM
Descripción Electrónicos  LOW POWER USE PLANAR PASSIVATION TYPE
PDF  5 Pages
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Fabricante Electrónico  MITSUBISHI [Mitsubishi Electric Semiconductor]
Página de inicio  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CRO2AM Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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Sep.2000
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
0
0.5
0
0.1
0.2
0.3
0.4
θ = 30°
60
°
120
°
90
°
180
°
DC
270
°
θ
360
°
RESISTIVE,
INDUCTIVE
LOADS
160
120
60
40
20
140
100
80
0
0.5
0
0.1
0.2
0.3
0.4
θ
360
°
θ = 30°
60
°
120
°
90
°
180
°
DC
270
°
NATURAL
CONVECTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
60
40
20
140
100
80
0
0.4
0
0.1
0.2
0.3
θ = 30° 60°
120
°
90
°
180
°
θ
360
°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
160
120
60
40
20
140
100
80
0
0.5
0
0.1
0.2
0.3
0.4
θ θ
360
°
θ = 30°
60
°
120
°
90
°
180
°
RESISTIVE LOADS
NATURAL
CONVECTION
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
0
0.5
0
0.1
0.2
0.3
0.4
θ = 30°
60
°
120
°
90
°
180
°
θ θ
360
°
RESISTIVE LOADS
160
120
60
40
20
140
100
80
0
160
–40
0
40
80
120 140
–20
20
60
100
TYPICAL EXAMPLE
RGK = 1k
Ω
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)



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