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STUD600S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STUD600S
Descripción Electrónicos  N-Channel Enhancement Mode Field Effect Transistor
PDF  8 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD600S Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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=
Parameter
S ymbol
Condition
Min Typ Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BVDSS
=
VGS 0V, ID 250uA
=
60
V
Zero Gate Voltage Drain Current
IDSS
VDS 48V, VGS 0V
=
=
1
Gate-Body Leakage
IGSS
VGS
20V, VDS 0V
=
=
100 nA
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
VGS(th)
VDS VGS, ID = 250uA
=
1.0
3.0
V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS 10V, ID 8A
VGS 4.5V, ID 4A
70
On-S tate Drain Current
ID(ON)
VDS = 5V, VGS = 10V
A
S
Forward Transconductance
FS
g
VDS 10V, ID 8A
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =30V, VGS = 0V
f =1.0MHZ
P
F
P
F
P
F
S WITCHING CHAR ACTE R IS TICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = 30V
ID = 8 A
VGS = 10V
R GEN = 3.3 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =30V, ID = 8A
VGS =10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
5
55
uA
m ohm
m ohm
N-Channel ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
VDS =30V, ID =8A,VGS =10V
nC
VDS =30V, ID =8A,VGS =4.5V
20
45
72
670
14.2
9
25
10
13
3.8
1.7
7
16
ohm
R g
Gate resistance
VGS =0V, VDS = 0V, f=1.0MHZ
3.2
S T U/D600S
45
50
1.8



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