93MT80KB datasheet(9/9 Pages) IRF

No. de pieza	93MT80KB

Descripción Electrónicos	THREE PHASE CONTROLLED BRIDGE

PDF	9 Pages

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Fabricante Electrónico	IRF [International Rectifier]

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53-93-113MT..KB Series

Bulletin I27503 08/97

www.irf.com

Fig. 16 - Thermal Impedance Z

thJC Characteristics

Fig. 17 - Gate Characteristics

0.1

100

0.001

0.01

0.1

100

1000

(b)

(a)

Rectangular gate pulse

(4) (3)

(2) (1)

(1) PGM = 100 W, tp = 500 µs

(2) PGM = 50 W, tp = 1 ms

(3) PGM = 20 W, tp = 25 ms

(4) PGM = 10 W, tp = 5 ms

Instantaneous Gate Current (A)

VGD

IGD

Frequency Limited by PG(AV)

rated di/dt: 20 V, 30 ohms

tr = 0.5 µs, tp >= 6 µs

<= 30% rated di/dt: 20 V, 65 ohms

tr = 1 µs, tp >= 6 µs

a) Recommended load line for

b) Recommended loadline for

53/ 93/ 113MT..KB Series

0.001

0.01

0.1

0.001

0.01

0.1

Square Wave Pulse Duration (s)

Per Junction

53MT..KB Series

113MT..KB Series

93MT..KB Series

Steady State Value

= 1.07 K/W

= 0.86 K/W

= 0.70 K/W

(DC Operation)

thJC

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