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LEBRQ7WM Datasheet(PDF) 3 Page - OSRAM GmbH |
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LEBRQ7WM Datasheet(HTML) 3 Page - OSRAM GmbH |
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3 / 18 page ![]() Version 1.2 LE BR Q7WM 2017-07-25 3 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit blue red Betriebstemperatur Operating temperature range T op – 40 … + 85 °C Lagertemperatur Storage temperature range T stg – 40 … + 85 °C Sperrschichttemperatur Junction temperature T j 125 °C Durchlassstrom pro Chip DC Forward current per chip DC ( T j = Tj max.) I F 20 ... 500 mA Durchlassstrom pro Chip gepulst Forward current per chip pulsed (f = 240Hz; D = 0.5; T j = Tj max.) I Fpulse 20 ... 1000 mA Durchlassstrom pro Chip gepulst Forward current per chip pulsed (f = 240Hz; D = 0.1; T S = 30°C) I Fpulse 20 ... 1200 - mA Stoßstrom pro Chip Surge current per chip (t ≤ 10µs; D = 0.5; Tj = Tj max.) I FM 20 ... 1500 mA Sperrspannung pro Chip DC Reverse voltage per chip DC V R not designed for reverse operation V ESD withstand voltage ESD Festigkeit (acc. to ANSI/ESDA/JEDEC JS-001 - HBM, Class 2) V ESD 2 kV |
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